Intrinsically stretchable electronics is rapidly emerging as a transformative platform for next-generation electronics, offering novel form factors and enhanced capabilities. Herein, we report high-performance intrinsically stretchable thin-film transistors based on two-dimensional semiconducting flakes. Our n-type molybdenum disulfide transistors exhibit a maximum field-effect mobility up to 12.5 cm2V−1s−1 (average 8 cm2V−1s−1) and an on/off current ratio above 107, even under 20% strain, and demonstrate stable performance during cyclic stretching tests. Structural analysis revealed that mechanical strain was accommodated via interflake motions; the flakes are connected by weak van der Waals bonds, enabling effective stress relaxation within the transistor channel. Furthermore, charge transport from the source to the drain in the channel remains robust as long as the vertical interconnection between the flakes and the substrate is maintained under stretching. This strain accommodation mechanism offers a generalizable pathway for integrating van der Waals semiconductors into stretchable electronics and addresses the critical lack of high-performance stretchable n-type materials for complementary metal-oxide–semiconductor integration, paving the way for logically capable and scalable deformable systems. Intrinsically stretchable electronic devices are interesting for wearable electronics, soft robotics, and stretchable display applications. Here, the authors report the fabrication of intrinsically stretchable solution-processed thin-film transistors based on 2D MoS2 flakes, showing high performance and stability under strain up to 20%.